Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1039-1042

  Zahler, James M ^a   Fontcuberta i Morral, Anna ^a   Ahn, Chang Geun ^a   Atwater, Harry A ^a   Wanlass, M W ^b   Chu, Charles ^c   Iles, Peter A ^d  

^a California Institute of Technology   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c Emcore   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS;

BACK SURFACE POWER EXTRACTION; LAYER TRANSFER PROCESSES; WAFER BONDING;

SOLAR CELLS;

EID: 0036953574     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Araujo, G. and A. Marti, Solar Energy Materials and Solar Cells, 1994, 33: p. 213-240.
2. Chiang, P., et al. Proc. 1st World Conf. Photovoltaic Energy Conversion, 1994.
3. Kurtz, S., et al., Applied Physics Letters, 1999, 74(5): p. 729-731.
4. Sharps, P., et al. 26th. IEEE Photovoltaic Specialists Conference, 1997.
5. Aspar, B., et al., Journal of Electronic Materials, 2001. 30(7): p. 834-840.
6. Tong, Q.-Y. and U. Gosele, Semiconductor Wafer Bonding. 1999, New York: John Wiley & Sons, Inc.
7. Zahler, J., et al., Thin Solid Films, 2002. 403-404: p. 558-562.
8. Madelung, O., M. Schulz, and H. Weiss, eds. Landolt-Bornstein: Vol. 17a, 1982, Springer-Verlag: New York.
9. Touloukian, Y., ed. Thermophysical properties of matter. 1970, IFI/Plenum: New York.