Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures

Semiconductors

Volumn 41, Issue 1, 2007, Pages 87-93

  Bochkareva, N I ^a   Tarkhin, D V ^a   Rebane, Yu T ^a   Gorbunov, R I ^a   Lelikov, Yu S ^a   Martynov, I A ^a   Shreter, Yu G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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[No Author keywords available]

Indexed keywords

EID: 33846329469     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607010174     Document Type: Article

References (30)

1. E. S. Jeon, V. Kozlov, Y. K. Song, et al., Appl. Phys. Lett. 69, 4194 (1996).
2. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
3. P. Perlin, V. Iota, B. A. Weinstein, et al., Appl. Phys. Lett. 70, 2993 (1997).
4. Y. H. Cjo, G. H. Gainer, A. J. Fischer, et al., Appl. Phys. Lett. 73, 1370 (1998).
5. P. Lefebvre, J. Allegre, B. Gil, et al., Phys. Rev. B 57, R9447 (1998).
6. T. Mukai, K. Takekava, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 37, L839 (1996).
7. Y. Narukava, Y. Kawakami, M. Funato, et al., Appl. Phys. Lett. 70, 981 (1997).
8. Y. Narukava, Y. Kawakami, S. Fujita, et al., Phys. Rev. B 55, R1938 (1997).
9. P. Fisher, J. Christen, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 39, L129 (2000).
10. T. Takeuchi, S. Sota, M. Katsuragawa, et al., Jpn. J. Appl. Phys., Part 2 36, L382 (1997).
11. Y. Narukava, Y. Kavakami, S. Fujita, and S. Nakamura, Phys. Rev. B 59, 10283 (1999).
12. R. W. Martin, P. G. Middleton, E. P. O'Donnell, and W. Van der Stricht, Appl. Phys. Lett. 74, 263 (1999).
13. H. C. Casey, Jr., J. Muth, S. Krishnankutty, and J. M. Zavada, Appl. Phys. Lett. 68, 2867 (1996).
14. T. Takeuchi, C. Wetzel, S. Yamaguchi, et al., Appl. Phys. Lett. 73, 1691 (1998).
15. T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys., Part 1 38, 3976 (1999).
16. K. Domen, R. Soejima, A. Kuramata, and T. Tanahashi, MRS Internet J. Nitride Semicond. Res. 3, 1 (1998).
17. Y. Zohta, H. Kuroda, R. Nii, and S. Nakamura, J. Cryst. Growth 189-190, 816 (1998).
18. N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 627 (2005)
19. [Semiconductors 39, 594 (2005)].
20. Y. T. Rebane, N. I. Bochkareva, V. E. Bougrov, et al., Proc. SPIE 4996, 113 (2003).
21. F. Urbach, Phys. Rev. 92, 1324 (1953).
22. H. C. Casey, Jr., J. Muth, S. Krishnankutty, and J. M. Zavada, Appl. Phys. Lett. 68, 2867 (1996).
23. P. Perlin, M. Osinski, P. G. Eliseev, et al., Appl. Phys. Lett. 69, 1680 (1996).
24. H. Morkos, Nitride Semiconductors and Devices (Springer, Berlin, 1999).
25. S.E. Aleksandrov, T. A. Gavrikova, and V. A. Zykov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1347 (2000)
26. [Semiconductors 34, 1295 (2000)].
27. G. E. Pikus, Fundamentals of the Theory of Semiconductor Devices (Nauka, Moscow, 1965) [in Russian].
28. L. D. Landau and E. M. Lifshitz, Course of Theoretical Physics, Vol. 3: Quantum Mechanics: Non-Relativistic Theory, 4th ed. (Nauka, Moscow, 1989; Pergamon, Oxford, 1977).
29. D. S. Sizov, V. S. Sizov, E. E. Zavarin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 264 (2005)
30. [Semiconductors 39, 249 (2005)].