Measurement of the energy depositions in a silicon volume by 14 MeV neutrons

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3707-3712

  Chabane, H ^a,b   Vaille J R ^b   Barelaud, B ^c   Wrobel, F ^d   Calzavara, Y ^e   McNulty, P J ^a,f   Decossas, J L ^c   Garcia, P ^b   Dusseau, L ^a,b   Boch, J ^a,b   Saigne F ^b  

^a IEEE   (France)

^b UNIVERSITÉ MONTPELLIER II   (France)

^c UNIVERSITY OF LIMOGES   (France)

^d UNIVERSITÉ CÔTE D'AZUR   (France)

^e CENTRE DE VALDUC   (France)

^f CLEMSON UNIVERSITY   (United States)

Author keywords

Neutron source; Neutron silicon interactions; Nuclear physics code; Silicon detector; Single event upset

Indexed keywords

ENERGY DEPOSITIONS; MONTE CARLO RECOIL ENERGY DETERMINATION (MC-RED); NEUTRON SOURCE; NEUTRON-SILICON INTERACTIONS; SILICON DETECTOR;

DEPOSITION; GAMMA RAYS; MONTE CARLO METHODS; NEUTRONS; SENSORS;

NUCLEAR PHYSICS;

EID: 33846313935     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885008     Document Type: Conference Paper

References (29)

1. M. S. Gordon, P. Goldhagen, K. P. Rodbell, T. H. Zabel, H. H. K. Tang, J. M. Clem, and P. Bailey, "Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3427-3434, Dec. 2004.
2. E. Normand, "Single event upset in avionics," IEEE Trans. Nucl. Sci, vol. 43, no. 2, pp. 461-473, Apr. 1996.
3. E. Normand, "Single event upsets at ground level," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2742-2750, Dec. 1996.
4. E. L. Petersen, "Nuclear reactions in semiconductors," IEEE Trans. Nucl. Sci., vol. 27, no. 6, pp. 1494-1499, Dec. 1980.
5. J. M. Palau, G. Hubert, K. Coulie, B. Sagnes, M. C. Calvet, and S. Fourtine, "Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions," IEEE Trans. Nucl. Sci., vol. 48, no. 2, pp. 225-231, Apr. 2001.
6. C. Vial, J. M. Palau, J. Gasiot, M. C. Calvet, and S. Fourtine, "A new approach for the prediction of the neutron-induced SEU rate," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2915-2920, Dec. 1998.
7. G. Hubert, J. M. Palau, K. Castellani-Coulié, M.-C. Calvet, and S. Fourtine, "Detailed analysis of secondary ions effect for the calculation of neutron-induced SER in SRAMs," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1953-1959, Dec. 2001.
8. J. M. Palau, M. C. Calvet, P. E. Dodd, F. W. Sexton, and P. Roche, "Contribution of device simulation to SER understanding," in Proc. 41st Annu. IEEE Int. Reliability Physics Symp., Dallas, TX, 2003, pp. 71-75.
9. F. Wrobel, J. M. Palau, M. C. Calvet, O. Bersillon, and H. Duarte, "Incidence of multi-particle events on soft error rate caused by n-Si nuclear reactions," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2580-2585, Dec. 2000.
10. F. Wrobel, "Use of nuclear codes for neutron-induced nuclear reactions in microelectronics," in Proc. 11th IEEE Int. On-line Testing Symp., Jul. 6-8, 2005, pp. 82-86.
11. F. Wrobel, J. M. Palau, M. C. Calvet, and P. lacconi, "Contribution of SiO2 in Neutron-Induced SEU in SRAMs," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2055-2059, Dec. 2003.
12. F. Wrobel, J. M. Palau, P. lacconi, M. C. Palau, B. Sagnes, and F. Saigné, "Methodology to compute neutron-induced alphas contribution on the SEU cross section in sensitive RAMs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3291-3297, Dec. 2004.
13. J. D. Kinnison, R. Maurer, D. R. Roth, P. J. McNulty, and W. G. Abdel-Kader, "Neutron-induced pion production in silicon-based circuits," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2251-2255, Dec. 2003.
14. M. Iwan, M. Cornelius, and A. B. Rosenfeld, "Verification of monte carlo calculations in fast neutron therapy using silicon microdosimetry," IEEE Trans. Nucl. Sci., vol. 51, no. 3, pp. 873-877, Jun. 2004.
15. A. M. Chugg, R. Jones, M. J. Moutrie, C. S. Dyer, K. A. Ryden, P. R. Truscott, J. R. Armstrong, and D. B. S. King, "Analyses of CCD images of Nucleon-silicon interaction events," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2851-2856, Oct. 2004.
16. A. M. Chugg, R. Jones, M. J. Moutrie, and P. R. Truscott, "Analyses of images of neutron interactions and single particle displacement damage in CCD arrays," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 3579-3584, Dec. 2004.
17. Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-induced Soft Errors in Semiconductor Devices, JEDEC JESD 89, Aug. 2001.
18. G. Gasiot, V. Ferlet-Cavrois, J. Baggio, P. Roche, P. Flatresse, A. Guyot, P. Morel, O. Bersillon, and J. du Port de Pontcharra, "SEU sensitivity of bulk and SOI technologies to 14 MeV neutrons," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3032-3037, Dec. 2002.
19. G. F. Knoll, Radiation Detection and Measurement, 3rd ed. New York: Wiley, 2000.
20. E. Segré, Nuclei. Particles, 2nd ed. Redwood City, CA: Benjamin Cummings, 1977.
21. Y. Calzavara, N. Authier, S. Wisniewski, and X. Jaquet, "Experimental facilities for mixed neutron/γirradiation," presented at the IEEE RADECS Conf., Cap d'Agde, France, 2005.
22. NDS, Handbook for Calculations of Nuclear Reaction Data. Vienna, Austria, Reference Input Parameter Library, May 1998.
23. A. Koning and J. P. Delaroche, "Local and global nucleon optical models from 1 keV to 200 MeV,"Nucl. Phys. A., vol. 713, pp. 231-310, Jan. 2003.
24. C. Kalbach, "The griffin model, complex particles and direct nuclear reactions," Z. Phys. A., vol. 283, pp. 401-411, Dec. 1977.
25. C. Kalbach, "Surface effects in the exciton model of preequilibrium nuclear reactions," Phys. Rev. C. Nucl. Phys., vol. 32, pp. 1157-1168, Oct. 1985.
26. M. Uhl, "Calculations of reaction cross sections on the basis of a statistical model, with allowance for angular momentum and parity conservation," Acta. Phys. Aust., vol. 31, p. 245, 1970.
27. C. Kalbach, "The griffin model, complex particles and direct nuclear reactions," Phys. Rev. C, Nucl. Phys., vol. 37, p. 2350, 1988.
28. S. Agosteo, C. Birattari, G. d'Angelo, F. Dal Corso, A. F. Para, I. Lippi, A. Pola, and P. Zotto, "Neutron spectrometry with a recoil radiator silicon detector device," Nucl. Instrum. Methods Phys. Res. A, vol. A515, pp. 589-604, Dec. 2003.
29. H. Chabane, J. R. Vaillé, B. Barelaud, F. Wrobel, T. Mérelle, J. L. Decossas, F. Saigné, L. Dusseau, N. Buard, M. C. Palau, M. Dumas, and J. M. Palau, "Determination of the deposited energy in a silicon volume by n-Si nuclear interaction," J. Appl. Phys., vol. 99, no. 12, 124916, June 2006.