Contribution of device simulation to SER understanding

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 71-75

  Palau, J M ^a   Calvet, M C ^b   Dodd, P E ^c   Sexton, F W ^c   Roche, Ph ^d  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b AIRBUS GROUP INNOVATIONS   (Germany)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION HARDENING; STATIC RANDOM ACCESS STORAGE;

ATMOSPHERIC NEUTRONS; DEVICE SIMULATIONS; PROBABILISTIC ASPECTS; SOFT ERROR RATE; SRAM MEMORY;

NUCLEAR REACTIONS;

EID: 84955243865     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197723     Document Type: Conference Paper

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