Determination of the deposited energy in a silicon volume by n-Si nuclear interaction

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Chabane, H ^a   Vaille J R ^a   Merelle T ^a   Saigne F ^a   Dusseau, L ^a   Dumas, M ^a   Palau, J M ^a   Barelaud, B ^b   Decossas, J L ^b   Wrobel, F ^c   Buard, N ^d   Palau, M C ^d  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b Centre National de la Recherche Scientifique   (France)

^c UNIVERSITÉ CÔTE D'AZUR   (France)

^d AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CODES (STANDARDS); COMPUTER SIMULATION; DEPOSITION; ELECTRON ENERGY LEVELS; ERROR CORRECTION; MONTE CARLO METHODS; NEUTRON IRRADIATION; PROBABILISTIC LOGICS; SILICON; SILICON SENSORS; STATIC RANDOM ACCESS STORAGE;

MEMORY POINT UPSETS; MONTE CARLO RECOIL ENERGY; MONTE CARLO SIMULATIONS; PROBABILISTIC APPROACH;

NUCLEAR PHYSICS;

EID: 33745725533     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209088     Document Type: Article

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