Properties of (InGa)As/GaAs QW (λ ≈ 1.2 μm) facet-coated edge emitting diode laser

Laser Physics

Volumn 16, Issue 3, 2006, Pages 441-446

  Guhne T ^a   Gottschalch, V ^a   Leibiger, G ^a   Herrnberger, H ^a   Kovac J ^b   Kovac Jr J ^b,c   Schmidt Grund, R ^a   Rheinlander B ^a   Pudis, D ^d  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c INTERNATIONAL LASER CENTER   (Slovakia)

^d UNIVERSITY OF ILINA   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC FILMS; ELECTROMAGNETIC WAVE EMISSION; OPTICAL DESIGN; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

FACET REFLECTIVITIES; FIELD PATTERNS; MODE SUPPRESSION; POWER ENHANCEMENT;

SEMICONDUCTOR LASERS;

EID: 33750922166     PISSN: 1054660X     EISSN: 15556611     Source Type: Journal    
DOI: 10.1134/S1054660X06030042     Document Type: Article

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