Tensile and compressive strain relief in InxGa1-xAs epilayers grown on InP probed by Raman scattering

Journal of Applied Physics

Volumn 82, Issue 2, 1997, Pages 803-809

  Groenen, J ^a   Landa, G ^a   Carles, R ^a   Pizani, P S ^b   Gendry, M ^c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^c ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001046896     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365775     Document Type: Article

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