Single-transverse-mode InGaAsP - InP edge-emitting bipolar cascade laser

IEEE Journal of Quantum Electronics

Volumn 41, Issue 11, 2005, Pages 1356-1360

  Dross, Frédéric ^a,b   van Dijk, Frédéric ^c   Parillaud, Olivier ^c   Vinter, Borge ^a,d   Vodjdani, Nakita ^e  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b IMEC   (Belgium)

^c ALCATEL THALES III V LAB   (France)

^d CRHEA CNRS   (France)

^e GIP Agence Nationale pour la Recherche   (France)

Author keywords

Bipolar cascade laser; Esaki diode; Multiple active region laser; Semiconductor cascade laser; Tunnel junction

Indexed keywords

ELECTROOPTICAL EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL JUNCTIONS;

BIPOLAR CASCADE LASER; ESAKI DIODE; MULTIPLE ACTIVE REGION LASER; SEMICONDUCTOR CASCADE LASER;

SEMICONDUCTOR LASERS;

EID: 27744579980     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.857658     Document Type: Article

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