Design and performance of an InGaAs-InP single-photon avalanche diode detector

IEEE Journal of Quantum Electronics

Volumn 42, Issue 4, 2006, Pages 397-403

  Pellegrini, Sara ^a   Warburton, Ryan E ^a   Tan, Lionel J J ^b   Ng, Jo Shien ^b   Krysa, Andrey B ^b   Groom, Kristian ^b   David, John P R ^b   Cova, Sergio ^c   Robertson, Michael J ^d   Buller, Gerald S ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c POLITECNICO DI MILANO   (Italy)

^d Centre for Integrated Photonics   (United Kingdom)

Author keywords

Avalanche breakdown; Avalanche photodiodes (APDs); Photodetectors; Photodiodes

Indexed keywords

1550 NM; AFTERPULSING; AVALANCHE BREAKDOWN; DARK COUNT RATE; INP; PERFORMANCE ISSUES; SINGLE PHOTON AVALANCHE DIODE; SINGLE PHOTON DETECTION; SINGLE-PHOTON DETECTION EFFICIENCIES;

AVALANCHE PHOTODIODES; DETECTORS; JITTER; OPTOELECTRONIC DEVICES; PARTICLE BEAMS; PHOTODETECTORS; PHOTONS; SEMICONDUCTING INDIUM;

PHOTODIODES;

EID: 33846282179     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.871067     Document Type: Article

References (24)

1. G. S. Buller, S. J. Fancey, J. S. Massa, A. C. Walker, S. Cova, and A. Lacaita., "Time-resolved photoluminescence measurements of InGaAs-InP multiple-quantum-well structures at 1.3 μm wavelengths by use of germanium single-photon avalanche photodiodes," Appl. Opt., vol.35, no.6, pp. 916-921, 1996.
2. A. L. Lacaita, P. A. Francese, and S. Cova, "Single-photon optical-time-domain reflectometer at 1.3 μm with 5 cm resolution and high sensitivity," Opt. Lett., vol.18, no.13, pp. 1110-1112, 1993.
3. S. Pellegrini, G. S. Buller, J. M. Smith, A. M. Wallace, and S. Cova, "Laser-based distance measurement using picosecond resolution time-correlated single-photon counting," Meas. Sci. Technol., vol.11, pp. 712-716, 2000. (Pubitemid 30416709)
4. K. J. Gordon, V. Fernandez, P. D. Townsend, and G. S. Buller, "A short wavelength gigaHertz clocked fiber optic quantum key distribution system," IEEE J. Quantum Electron., vol.40, no.10, pp. 900-908, Oct. 2004.
5. F. Stellari, A. Tosi, F. Zappa, and S. Cova, "CMOS circuit testing via time-resolved luminescence measurements and simulations," IEEE Trans. Instrum. Meas., vol.53, no.1, pp. 163-169, Jan. 2004.
6. P. A. Hiskett, G. S. Buller, A. Y. Loudon, J. M. Smith, I. Gontijo, A. C. Walker, P. D. Townsend, and M. J. Robertson, "Performance and design of InGaAs-InP photodiodes for single-photon counting at 1.55 μm," Appl. Opt.,vol.39, no.36, pp. 6818-6829, 2000.
7. A. Lacaita, F. Zappa, S. Cova, and P. Lovati, "Single-photon detection beyond 1 μm: Performance of commercially available InGaAsInP detectors," Appl. Opt., vol.35, pp. 2986-2996, 1996.
8. B. E. Kardynal, A. J. Shields, N. S. Beattie, I. Farrer, K. Cooper, and D. A. Ritchie, "Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor," Appl. Phys. Lett., vol.84, no.3, pp. 419-421, 2004.
9. J. C. Blakesley, P. See, A. J. Shields, B. E. Kardyna, P. Atkinson, I. Farrer, and D. A. Ritchie, "Efficient single photon detection by quantum dot resonant tunneling diodes," Phys. Rev. Lett., vol.94, no.6, p. 067401, 2005.
10. N. S. Beattie, B. E. Kardynal, A. J. Shields, I. Farrer, D. A. Ritchie, and M. Pepper, "Single-photon detection mechanism in a quantum dot transistor," Physica E, vol.26, no.1-4, pp. 356-360, 2005. (Pubitemid 40212194)
11. G. N. Gol'tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, "Picosecond superconducting single-photon optical detector," Appl. Phys. Lett., vol.79, no.6, pp. 705-707, 2001. (Pubitemid 33598410)
12. Y. Liu, S. R. Forrest, M. J. Lange, G. H. Olsen, and D. E. Ackley, "A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction," J. Lightw. Technol., vol.10, no.2, pp. 182-193, Feb. 1992.
13. S. R. Forrest, M. DiDomenico Jr., R. G. Smith, and H. J. Stocker, "Evidence for tunneling in reverse-biased III-V photodetector diodes," A Phys. Lett., vol.36, no.7, pp. 580-582, 1980.
14. P. A. Hiskett, J. M. Smith, G. S. Buller, and P. D. Townsend, "Low-noise single-photon detection at a wavelength of 1.55 μm," Electron. Lett., vol.37, pp.1081-1083, 2001.
15. M. Kobayashi, S. Yamazaki, and T. Kaneda, "Planar InP/GaInAsP/ GaInAs buried structure avalanche photodiode," Appl. Phys. Lett., vol.45, no.7, pp. 759-761, 1984.
16. Y. Kishi, K. Yasuda, S. Yamazaki, K. Nakajima, and I. Umebu, "Liquid-phase epitaxial growth of InP/GaInAsP/GaInAs buried-structure avalanche photodiodes," Electron. Lett., vol.20, no.4, pp. 165-167, 1984. (Pubitemid 14544571)
17. S. M. Sze and G. Gibbons, "Effect of junction curvature on breakdown voltage in semicondutors," Solid-State Electron., vol.9, no.9, pp. 831-845, 1966.
18. Z. I. Alferov, A. B. Zhuravlev, E. L. Portnoi, and N. M. Stel'makh, "Generation of picosecond pulses in hetero-lasers with a modulated durability," Sov. Technol. Phys. Lett., vol.12, pp. 452-458, 1996.
19. J. M. Smith, P. A. Hiskett, I. Gontijo, L. Purves, and G. S. Buller, Rev. Sci. Instrum, vol.72, pp. 2325-2329, 2001.
20. S. Cova, M. Ghioni, A. Lacaita, C. Samori, and F. Zappa, "Avalanche photodiodes and quenching circuits for single photon detection," Appl. Opt., vol.35, pp. 1956-1976, 1996. (Pubitemid 126622118)
21. M. A. Itzler, K. K. Loi, S. McCoy, N. Codd, and N. Komaba, "Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications," in Proc. 12th Ann. Meeting Lasers Electro-Optics Soc., 1999, Paper ThK0005, pp. 748-749.
22. M. A. Itzler, K. K. Loi, S. McCoy, N. Codd, and N. Komaba, "Highperformance, manufacturable avalanche photodiodes for 10 gb/s optical receivers," in Proc. Opt. Fiber Commun. Conf., Washington, DC, 2000, pp. 126-128. (Pubitemid 30968009)
23. D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, "Photon counting for quantum key distribution with Peltier cooled InGaAs-InP APDs," J. Mod. Opt., vol 48, no.13, pp. 1967-1981, 2001.
24. S. R. Forrest and R. G. Smith, "Performance of In0.53Ga0.47As-InP avalanche photodiodes," IEEE J. Quantum Electron., vol.QE-18, no.12, pp. 2040-2048, Dec. 1982.