MBE growth and characterization of GaAs1-xSb x epitaxial layers on Si (0 0 1) substrates

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 602-605

  Toda, T ^a   Nishino, F ^a   Kato, A ^a   Kambayashi, T ^a   Jinbo, Y ^a   Uchitomi, N ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

AlSb; GaAs1 xSbx; Heteroepitaxy; Narrow band gap semiconductor

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; SUBSTRATES; X RAY DIFFRACTION;

BEAM EQUIVALENT PRESSURE (BEP); BUFFER LAYER; GAAS1-XSBX; HETEROEPITAXY; NARROW BAND-GAP SEMICONDUCTOR;

EPITAXIAL GROWTH;

EID: 33645162524     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.152     Document Type: Conference Paper

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