Strain nonuniformity in GaAs heteroepitaxial films on Si(001) studied by x-ray diffraction

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Shalimov, Artem ^a   Bk Misiuk, Jadwiga ^a   Kaganer, Vladimir M ^b   Calamiotou, Maria ^c   Georgakilas, Alexandros ^d,e  

^a INSTITUTE OF PHYSICS   (Poland)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIVERSITY OF ATHENS   (Greece)

^d INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^e UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN MEASUREMENT; X RAY DIFFRACTION;

DISLOCATION LINES; HETEROEPITAXIAL FILMS; SPACE MAPS; STRAIN NONUNIFORMITY;

THIN FILMS;

EID: 33846275332     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2407260     Document Type: Article

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