An LTPS active-matrix process with PECVD doped N+ drain/source areas

Journal of the Society for Information Display

Volumn 14, Issue 2, 2006, Pages 119-126

  Baur, Holger ^a   Jelting, Sven ^a   Benson, Niels ^a   Fruehauf, Norbert ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Active matrix technology; AMLCD; AMOLED; Drain source doping; LTPS; PECVD; Poly Si TFT

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ION BOMBARDMENT; ION IMPLANTATION; IONS; LITHIUM COMPOUNDS; POLYSILICON; THIN FILM TRANSISTORS;

ACTIVE-MATRIX TECHNOLOGY; AMLCD; AMOLED; DRAIN/SOURCE DOPING; LTPS; PECVD; POLY-SI TFT;

SILICON;

EID: 33846137788     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.2176113     Document Type: Conference Paper

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