Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 959-962

  Sobolev, M M ^a   Kochnev, I V ^a   Lantratov, V M ^a   Cherkashin, N A ^a   Emtsev, V V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COOLING; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; HOLE TRAPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

BIAS-ON-BIAS-OFF COOLING CONDITIONS; CAPACITANCE-VOLTAGE MEASUREMENTS; ISOCHRONOUS ANNEALING;

HETEROJUNCTIONS;

EID: 0033313244     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00577-3     Document Type: Article

References (9)

1. F. Capasso et al., Appl. Phys. Lett. 46 (1985) 664.
2. M.M. Sobolev et al., Semiconductors 33 (1999) 157.
3. M.M. Sobolev et al., J. Electron. Mater. 28 (1999).
4. M.M. Sobolev et al., Mater. Sci. Forum. 258-263 (1997) 1619.
5. M.M. Sobolev et al., Semiconductors 31 (1997) 1074.
6. G.M. Martin et al., Electron. Lett. 13 (1977) 191.
7. D. Pons et al., J. Appl. Phys. 51 (1980) 2038.
8. A. Mitonneau et al., Electron. Lett. 13 (1977) 666.
9. D. Stievenard et al., J. Appl. Phys. 59 (1986) 743.