Non-exponential capture of electrons in GaAs with embedded InAs quantum dots

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 971-975

  Walther, C ^a   Bollmann, J ^a   Kissel, H ^a   Kirmse, H ^a   Neumann, W ^a   Masselink, W T ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; POINT DEFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

INTRINSIC ELECTRONIC LEVELS; NON-EXPONENTIAL FUNCTIONS; THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033322194     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00604-3     Document Type: Article

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