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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1499-1502

Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors

(4) Chakrabarti, S a Stiff Roberts, A D a Bhattacharya, P a Kennerly, S W b

a UNIVERSITY OF MICHIGAN (United States)

b U S ARMY RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

DOT-IN-A-WELL (DWELL) STRUCTURE; MULTI-WAVELENGTH DETECTION; QUANTUM DOT INFRARED PHOTODETECTORS (QDIP); WET CHEMICAL ETCHING;

HETEROJUNCTIONS;

EID: 3242704170 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1755709 Document Type: Conference Paper

Times cited : (20)

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