Effects of Si-doped GaAs layer on optical properties of InAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 25, Issue 4, 2005, Pages 647-653

  Park, Y M ^a,c   Park, Y J ^a   Kim, K M ^a   Lee, J I ^a   Yoo, K H ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Kyung Hee University   (South Korea)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

Bandgap normalization; Quantum dots; Si doped GaAs layer; State filling

Indexed keywords

ELECTRIC EXCITATION; ENERGY GAP; NUCLEATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BANDGAP NORMALIZATION; SI-DOPED GAAS LAYERS; STATE FILLING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 10044258516     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.09.007     Document Type: Article

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