Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 18, Issue 4, 2003, Pages 541-546

  Siegert, J ^a   Gaarder, A ^a   Marcinkevicius S ^a   Leon, R ^b   Chaparro, S ^c   Johnson, S R ^c   Sadofyev, Y ^c   Zhang, Y H ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c Arizona State University   (United States)

Author keywords

Dislocations; Lateral alignment; Quantum dots; Time resolved photoluminescence

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

PHOTOEXCITED CARRIER DYNAMICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038657896     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(03)00232-7     Document Type: Article

References (24)

1. Hartmann A., Ducommun Y., Loubies L., Leifer K., Kapon E. Appl. Phys. Lett. 73:1998;2322.
2. Jeppsen S., Miller M.S., Kowalski B., Maximov I., Samuelson L. Superlatt. Microstruct. 23:1998;1347.
3. Nötzel R., Temmyo Y., Tamamura T. Jpn. J. Appl. Phys. 33:1994;L275.
4. Ikoma N., Ohkouchi S. Jpn. J. Appl. Phys. 34:1995;L724.
5. Leon R., Senden T.J., Kim Y., Jagadish C., Clark A. Phys. Rev. Lett. 78:1997;4942.
6. Shiryaev S.Y., Jensen F., Hansen J.L., Petersen J.W., Larsen A. Phys. Rev. Lett. 78:1997;503.
7. Leon R., Chaparro S., Johnson S.R., Navarro C., Jin X., Zhang Y.H., Siegert J., Marcinkevičius S., Liao X.Z., Zou J. J. Appl. Phys. 91:2002;5826.
8. U. Bockelmann, T. Egeler, Phys. Rev. B (1992) 15574.
9. Uskov A.V., McInerney J., Adler F., Schweizer H., Pilkuhn M.H. Appl. Phys. Lett. 72:1998;58.
10. Ferreira R., Bastard G. Appl. Phys. Lett. 74:1999;2818.
11. Feldmann J., Cundiff S.T., Arzberger M., Böhm G., Abstreiter G. J. Appl. Phys. 89:2000;1180.
12. Magnusdottir I., Uskov A.V., Bischoff S., Tromborg B., M ø rk J. J. Appl. Phys. 92:2002;5982.
13. Marcinkevičius S., Olin U., Treideris G. J. Appl. Phys. 74:1993;3587.
14. Marcinkevičius S., Leon R. Phys. Rev. B. 59:1999;4630.
15. Leon R., Marcinkevičius S., Liao X.Z., Zou J., Cockayne D.J.H., Fafard S. Phys. Rev. B. 60:1999;R8517.
16. Gaarder A., Marcinkevičius S., Rodríguez Messmer E., Lourdudoss S. J. Crystal Growth. 226:2001;451.
17. Schroeter D.F., Griffiths D., Sercel P.C. Phys. Rev. B. 54:1996;1486.
18. Walther C., Bollmann J., Kissel H., Kirmse H., Neumann W., Masselink W.T. Physica B. 273-274:1999;971.
19. Sobolev M.M., Kochnev I.V., Lantratov V.M., Cherkashin N.A., Emtsev V.V. Physica B. 273-274:1999;959.
20. Sobolev M.M., Kovsh A.R., Ustinov V.M., Yu Egorov A., Zhukov A.E., Maximov M.V., Ledentsov N.N. Semiconductor. 31:1997;1074.
21. Zhang G., Ovtchinnikov A., Pessa M. Appl. Phys. Lett. 62:1993;967.
22. Moloney M.H., Hegarty J., Buydens L., Demeester P., Grey R., Woodhead J. Appl. Phys. Lett. 62:1993;3327.
23. Du A.Y., Li M.F., Chong T.C., Xu S.J., Zhang Z., Yu P.D. Thin Solid Films. 311:1997;7.
24. Stievenard D., Boddaert X., Bourgoin J.C., von Baradeleben H.J. Phys. Rev. B. 41:1990;5271.