Homoepitaxial growth of 4H-SiC using CH3CI carbon precursor

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 81-84

  Koshka, Y ^a   Lin, Huang De ^a   Meinychuk, G ^a   Mazzola, M S ^a   Wyat, J L ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Chloromethane; CVD; Epitaxial growth; Halogenated precursors; Hot wall; Photoluminescence

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GROWTH RATE; HALOGENATION; PHOTOLUMINESCENCE; PROPANE; SILANES; SURFACE MORPHOLOGY;

CARBON PRECURSOR; HALOGENATED PRECURSORS; HOMOEPITAXIAL GROWTH; SURFACE MORPHOLOGY DEGRADATION;

SILICON CARBIDE;

EID: 33750327539     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.81     Document Type: Conference Paper

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