Epitaxial growth of SiC on α-SiC using Si2Cl6+C3H8+H2 system

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 139-142

  Nishino, S ^a   Miyanagi, T ^a   Nishio, Y ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical Vapor Deposition (CVD); Homoepitaxy; Photoluminescence; Si2Cl6 (Hexachlorodisilane); Site Competition; Surface Morphology; Ti

Indexed keywords

EPITAXIAL GROWTH; LUMINESCENCE OF SOLIDS; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE;

HEXACHLORODISILANE; HOMOEPITAXY;

SILICON CARBIDE;

EID: 0031702272     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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