Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7684-7686

  Harrison, C N ^a   David, J P R ^a   Hopkinson, M ^a   Rees, G J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; IONIZATION; PHOTOMULTIPLIERS; SEMICONDUCTING ALUMINUM COMPOUNDS;

AVALANCHE MULTIPLICATION;

AVALANCHE DIODES;

EID: 0037115664     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1524017     Document Type: Article

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