Impact ionization in thin silicon diodes

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 807-809

  Agarwal, P ^a   Goossens, M J ^a   Zieren, V ^a   Aksen, E ^a   Slotboom, J W ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Avalanche breakdown; Bipolar transistors; Photodiodes

Indexed keywords

APPROXIMATION THEORY; AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

AVALANCHE BREAKDOWN; HIGH SPEED BIPOLAR TRANSISTOR; SILICON DIODES; TUNNELING CURRENTS;

PHOTODIODES;

EID: 10644294802     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.838557     Document Type: Article

References (11)

1. J.-S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S.-J. Jeng, M. Khater, F. Pagette, C. Schnabel; P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, and S. Subbana, "SiGe HBTs with cutoff frequency of 350 GHz," in IEDM Tech. Dig., 2002.
2. E. F. Crabbé, J. M. C. Stork, G. Baccarani, M. V. Fischetti, and S. E. Laux, "The impact of nonequilibrium transport on breakdown and transit time in bipolar transistors," in IEDM Tech. Dig., 1990, pp. 463-466.
3. J. W. Slotboom, G. Streutker, M. J. van Dort, P. H. Woerlee, A. Pruijmboom, and D. J. Gravesteijn, "Non-local impact ionization in silicon devices," in IEDM Tech. Dig., 1991, pp. 127-130.
4. M. J. Kumar, A. D. Sadovnikov, and D. J. Roulston, "Collector design tradeoffs for low voltage applications of advanced bipolar transistors," IEEE Trans. Electron Devices, vol. 40, pp. 1478-1483, Aug. 1993.
5. D. J. Massey, J. P. R. David, C. H. Tan, B. K. Ng, G. J. Rees, D. J. Robbins, and D. C. Herbert, "Impact ionization in submicron silicon devices," J. Appl. Phys., vol. 95, no. 10, pp. 5931-5933, 2004.
6. S. A. Plimmer, J. P. R. David, D. C. Herbert, T. W. Lee, G. J. Rees, P. A. Houston, R. Grey, P. N. Robson, A. W. Higgs, and D. R. Wight, "Investigation of impact ionization in thin GaAs diodes," IEEE Trans. Electron Devices, vol. 43, pp. 1066-1072, July 1996.
7. L. C. M. van den Oever, L. K. Nanver, and J. W. Slotboom, "Design of 200 GHz SiGe HBTs," in Proc. Bipolar/BiCMOS Circuits Technology Meeting, 2001, pp. 78-81.
8. M. V. Fischetti, S. E. Laux, and E. Crabbé, "Understanding hot-electron transport in silicon devices: Is there a shortcut?," J. Appl. Phys., vol. 78, no. 2, pp. 1058-1087, 1995.
9. R. Van Overstraeten and H. De Man, "Measurement of ionization rates in diffused silicon p-n junctions," Solid State Electron., vol. 13, pp. 583-608, 1970.
10. R. J. McIntyre, "A new look at impact ionization," IEEE Trans. Electron Devices, vol. 46, no. 8, pp. 1623-1631, 1999.
11. P. Palestri, L. Selmi, G. A. M. Hurkx, J. W. Slotboom, and E. Sangiorgi, "Energy dependent electron and hole impact ionization in Si bipolar transistors," in IEDM Tech. Dig., 1998, pp. 885-888.