Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness

Journal of Crystal Growth

Volumn 286, Issue 1, 2006, Pages 23-27

  Lei, W ^a   Chen, Y H ^a   Wang, Y L ^a   Huang, X Q ^a   Zhao, Ch ^a   Liu, J Q ^a   Xu, B ^a   Jin, P ^a   Zeng, Y P ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Defects; A1. Lateral composition modulation; A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wires; B2. Semiconductor III V material

Indexed keywords

CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; THICKNESS CONTROL;

INAS; LATERAL COMPOSITION MODULATION; SEMICONDUCTOR III-V MATERIALS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 28244456551     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.054     Document Type: Article

References (19)

1. J.S. Kim, J.H. Lee, S.U. Hong, W.S. Han, H.-S. Kwack, C.W. Lee, and D.K. Oh Appl. Phys. Lett. 85 2004 1033
2. E. Finkman, S. Maimon, V. Immer, G. Bahir, S.E. Schacham, F. Fossard, F.H. Julien, J. Brault, and M. Gendry Phys. Rev. B 63 2001 045323
3. O. Bierwagen, and W.T. Masselink Appl. Phys. Lett. 86 2005 113110
4. B. Alén, J. Martínez-Pastor, L. González, J.M. García, S.I. Molina, A. Ponce, and R. García Phys. Rev. B 65 2002 241301
5. Z.H. Zhang, C.F. Xu, K.C. Hsieh, and K.Y. Cheng J. Crystal Growth 278 2005 61
6. P. Paki, R. Leonelli, L. Isnard, and R.A. Masut J. Appl. Phys. 86 1999 6789
7. B. Salem, J. Olivares, G. Guillot, G. Bremond, J. Brault, C. Monat, M. Gengry, G. Hollinger, F. Hassen, and H. Maaref Appl. Phys. Lett. 79 2001 4435
8. E. Finkman, S. Maimon, V. Immer, G. Bahir, S.E. Schacham, O. Gauthier-Lafaye, S. Herriot, F.H. Julien, M. Gendry, and J. Brault Physica E 7 2000 139
9. F. Fossard, A. Helman, F.H. Julien, M. Gendry, J. Brault, E. Péronne, A. Alexandrou, S.E. Schacham, and E. Finkman Physica E 17 2003 82
10. F. Fossard, F.H. Julien, E. Péronne, A. Alexandrou, J. Brault, and M. Gendry Infrared Phys. Technol. 42 2001 443
11. M. Hjiri, F. Hassen, H. Maaref, B. Salem, G. Bremond, O. Marty, J. Brault, and M. Gendry Physica E 17 2003 180
12. Z.Y. Xu, Z.D. Lu, X.P. Yang, Z.L. Yuan, B.Z. Zheng, J.Z. Xu, W.K. Ge, Y. Wang, J. Wang, and L.L. Chang Phys. Rev. B 54 1996 11528
13. Y.T. Dai, J.C. Fan, Y.F. Chen, R.M. Lin, S.C. Lee, and H.H. Lin J. Appl. Phys. 82 1997 4489
14. C. Affentauschegg, and H.H. Wieder Semicond. Sci. Technol. 16 2001 708
15. K. Mukai, N. Ohtsuka, and M. Sugawara Appl. Phys. Lett. 70 1997 2416
16. S. Sanguinetti, K. Watanabe, T. Kuroda, F. Minami, Y. Gotoh, and N. Koguchi J. Crystal Growth 242 2002 321
17. D.E. Wohlert, S.T. Chou, A.C. Chen, K.Y. Cheng, and K.C. Hsieh Appl. Phys. Lett. 68 1996 2386
18. K. Mukai, and M. Sugawara Appl. Phys. Lett. 74 1999 3963
19. O. Wada, and H. Hasegawa InP-Based Materials and Devices: Physics and Technology 1999 Wiley New York p. 80