Synthesis of semiconductor nanowires by annealing

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1802-1804

  Zhi, C Y ^a   Bai, X D ^a   Wang, E G ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATALYSTS; CRYSTALLIZATION; ELECTRON DIFFRACTION; ENERGY DISPERSIVE SPECTROSCOPY; GOLD; GROWTH KINETICS; HIGH RESOLUTION ELECTRON MICROSCOPY; OXYGEN; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; VAPOR PRESSURE;

GROWTH CONDITIONS; GROWTH MECHANISMS; NANOWIRES; SELECTED AREA ELECTRON DIFFRACTION (SAED);

SEMICONDUCTOR MATERIALS;

EID: 4944233077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1786374     Document Type: Article

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