Resistance switch employing a simple metal nanogap junction

Nanotechnology

Volumn 17, Issue 22, 2006, Pages 5669-5674

  Naitoh, Yasuhisa ^a   Horikawa, Masayo ^a   Abe, Hidekazu ^a   Shimizu, Tetsuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRODES; HYSTERESIS; NANOTECHNOLOGY; NEGATIVE RESISTANCE;

BIAS VOLTAGE; NANOGAP JUNCTIONS; VOLATILE RESISTANCE;

ELECTRIC SWITCHES;

EID: 33846043526     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/22/022     Document Type: Article

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