First principles simulations of kink defects on the SP 90° partial dislocation in silicon

Progress in Materials Science

Volumn 52, Issue 2-3, 2007, Pages 421-463

  Valladares, Alexander ^a   Sutton, A P ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPLEXATION; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; SILICON;

DOPANT EFFECT; ELASTIC INTERACTIONS; TERSOFF POTENTIAL;

CRYSTAL DEFECTS;

EID: 33845978442     PISSN: 00796425     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pmatsci.2006.10.008     Document Type: Review

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