Activities of dislocations in heavily impurity-doped Si

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10065-10069

  Yonenaga, I ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); SEGREGATION (METALLOGRAPHY); SEMICONDUCTING BORON; SILICON WAFERS; STRESS ANALYSIS; THERMAL EFFECTS;

DISLOCATION GENERATION;

SEMICONDUCTOR DOPING;

EID: 0034499439     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/306     Document Type: Article

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