Dynamics of partial dislocations in silicon

Materials Science and Engineering B

Volumn 37, Issue 1-3, 1996, Pages 185-188

  Hansen, L B ^a   Stokbro, K ^b   Lundqvist, B I ^a   Jacobsen, K W ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b SISSA   (Italy)

^c TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Partial dislocations; Silicon

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; BINDING ENERGY; CALCULATIONS; DISLOCATIONS (CRYSTALS); DYNAMICS; ENERGY GAP;

ATOMIC SCALE CALCULATIONS; BAND GAP; EFFECTIVE MEDIUM TIGHT BINDING THEORY; KINK FORMATION; LINEARIZED MUFFIN TIN ORBITAL; MIGRATION ENERGIES; PARTIAL DISLOCATIONS;

SILICON;

EID: 0042762131     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01483-7     Document Type: Article

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