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Volumn 45, Issue 11, 2001, Pages 1267-1272
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Dislocation behavior in heavily impurity doped Si
a
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Author keywords
Dislocation mobility; Dislocations; Elemental semiconductor; Impurity; Segregation
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL IMPURITIES;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
SEMICONDUCTOR DOPING;
SILICON WAFERS;
SUBSTRATES;
DISLOCATION BEHAVIOR;
IMPURITY SEGREGATION;
SEMICONDUCTING SILICON;
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EID: 0035802564
PISSN: 13596462
EISSN: None
Source Type: Journal
DOI: 10.1016/S1359-6462(01)01160-5 Document Type: Article |
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Times cited : (21)
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References (16)
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