Si incorporation and Burstein-Moss shift in n-type GaAs

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 60, Issue 1, 1999, Pages 1-11

  Hudait, M K ^a,b   Modak, P ^b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY;

LOW TEMPERATURE PHOTOLUMINESCENCE (LTPL) SPECTROSCOPY; MOLE FRACTIONS; VACANCY CONTROL MODELS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032629566     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00016-1     Document Type: Article

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