Crystal-face dependences of surface band edges and hole reactivity, revealed by preparation of essentially atomically smooth and stable (110) and (100) n-TiO2 (rutile) surfaces

Journal of Physical Chemistry B

Volumn 109, Issue 5, 2005, Pages 1648-1651

  Nakamura, Ryuhei ^a   Ohashi, Naomichi ^a   Imanishi, Akihito ^a   Osawa, Takeo ^b   Matsumoto, Yuji ^b   Koinuma, Hideomi ^b,c   Nakato, Yoshihiro ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC PHOTOCURRENT; ATOMIC LEVEL; PHOTOETCHING; SURFACE TRAPPED HOLE (STH);

ANNEALING; ATOMIC FORCE MICROSCOPY; COLLOIDS; FERMI LEVEL; IONS; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; OXIDATION; PH EFFECTS; PHOTOCURRENTS; SILICA; SOLUTIONS; SPUTTERING; SURFACES; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SINGLE CRYSTALS;

EID: 13444262449     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp044710t     Document Type: Article

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