Highly sensitive humidity sensor using Pd/porous GaAs Schottky contact

IEEE Sensors Journal

Volumn 6, Issue 6, 2006, Pages 1415-1421

  Salehi, Alireza ^a   Nikfarjam, Alireza ^a   Kalantari, Dara Jamshidi ^a  

^a K N TOOSI UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

Barrier height; GaAs; Humidity sensor; Palladium; Pore structures; Response time; Schottky contact; Sensitivity

Indexed keywords

ATMOSPHERIC HUMIDITY; PALLADIUM; POROSITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SENSITIVITY ANALYSIS;

BARRIER HEIGHT; HUMIDITY SENSOR; PORE STRUCTURES; SCHOTTKY CONTACT;

CHEMICAL SENSORS;

EID: 33845676246     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2006.881371     Document Type: Article

References (37)

1. C. Laville, J. Y. Deletage, and C. Pellet, "Humidity sensors for a pulmonary function diagnostic microsystem," Sens. Actuators B, Chem., vol. 76, no. 1-3, pp. 304-309, Jun. 2001.
2. E. Traversa and A. Bearzott, "A novel humidity-detection mechanism for ZnO dense pellets," Sens. Actuators B, Chem., vol. 23, no. 2/3, pp. 181-186, Feb. 1995.
3. E. J. Connoly, G. M. O'Halloran, H. T. M. Pham, P. M. Sarro, and P. J. French, "Comparison of porous silicon, porous polysilicon and porous silicon carbide as materials for humidity sensing applications," Sens. Actuators A, Phys., vol. 99, no. 1/2, pp. 25-30, Apr. 2002.
4. P. Innocenzi, A. Martucci, M. Guglielmi, A. Bearzotti, and E. Traversa, "Electrical and structural characterization of mesoporous silica thin films as humidity sensors," Sens. Actuators B, Chem., vol. 76, no. 1-3, pp. 299-303, Jun. 2001.
5. Y. Li and M. J. Yang, "Bilayer thin film humidity sensors based on sodium polystyrenesulfonate and substituted polyacetylenes," Sens. Actuators B, Chem., vol. 87, no. 1, pp. 184-189, Nov. 2002.
6. E. J. Connoly, H. T. M. Pham, J. Groeneweg, P. M. Sarro, and P. J. French, "Relative humidity sensors using porous SiC membrane and Al electrodes," Sens. Actuators B, Chem., vol. 100, no. 1/2, pp. 216-220, Jun. 2004.
7. P. M. Faia, C. S. Futado, and A. J. Ferreira, "Humidity sensing properties of a thick-film titania prepared by a slow spinning process," Sens. Actuators B, Chem., vol. 101, no. 1/2, pp. 190-193, Jun. 2004.
8. N. Yamazoe and Y. Shimizu, "Humidity sensors: Principles and applications," Sens. Actuators B, Chem., vol. 10, no. 3/4, pp. 379-398, 1986.
9. W. Qu and J. Meyer, "A novel thick-film ceramic humidity sensor," Sens. Actuators B, Chem., vol. 40, no. 2/3, pp. 175-182, May 1997.
10. K. Suri, S. Annapoorni, A. K. Sarkar, and R. P. Tandon, "Gas and humidity sensors based on iron oxide-polypyrrole nanocomposite," Sens Actuators B, Chem., vol. 81, no. 2/3, pp. 277-282, Jan. 2002.
11. L. Gu, Q.-A. Huang, and M. Qin, "A novel capacitive-type humidity sensor using CMOS fabrication technology," Sens. Actuators B, Chem., vol. 99, no. 2/3, pp. 491-498, May 2004.
12. P. M. Harrey, B. J. Ramsey, P. S. A. Evans, and D. J. Harrison, "Capacitive-type humidity sensors fabricated using the offset lithographic printing process," Sens. Actuators B, Chem., vol. 87, no. 2, pp. 226-232, Dec. 2002.
13. M. Bjorkqvist, J. Salonen, J. Paski, and E. Laine, "Characterization of thermally carbonized porous silicon humidity sensor," Sens. Actuators A, Phys., vol. 112, no. 2/3, pp. 244-247, May 2004.
14. J. Das, S. Dey, S. M. Hossain, Z. M. C. Rittersma, and H. Saha, "A hygrometer comprising a porous silicon humidity sensor with phase-detection electronics," IEEE Sensors J., vol. 3, no. 4, pp. 414-4-20, Aug. 2003.
15. E. Traversa, "Ceramic sensors for humidity detection: The state-of-the-art and future developments," Sens. Actuators B, Chem., vol. 23, no. 2/3, pp. 135-156, Feb. 1995.
16. A. Tetelin, C. Pellet, C. Laville, and G. Nkaoua, "Fast response humidity sensor for a medical microsystem," Sens. Actuators B, Chem., vol. 91, no. 1-3, pp. 211-218, Jun. 2003.
17. C. Laville and C. Pellet, "Comparison of three humidity sensors for a pulmonary function diagnosis microsystem," IEEE Sensors J., vol. 2, no. 2, pp. 96-101, Apr. 2002.
18. F. Proix, A. Akremi, and Z. T. Zhong, "Effects of vacuum annealing on the electronic properties of cleaved GaAs," J. Phys. C, Solid State Phys., vol. 16, no. 28, pp. 5449-5463, Oct. 1983.
19. C. Y. Chang and F. Kai, GaAs High Speed Devices. Hoboken, NJ: Wiley, 1996.
20. P. H. Holloway and G. E. McGuire, Handbook of Compound Semiconductors. Norwich, NY: William Andrew Inc., 1996.
21. R. Diehl, High Power Diode Lasers. New York: Springer-Verlag, 2000.
22. R. V. Ghita, M. Nedelcu, and M. F. Lazarescu, "Chemical deposition of Pd on GaAs," Cryst. Res. Technol., vol. 37, no. 4, pp. 323-328, Apr. 2002.
23. Z. Xie and J. Zhu, "The effect of the vertical load on the scraping test," Thin Solid Films, vol. 315, no. 1/2, pp. 192-198, Mar. 1998.
24. A. Salehi and A. Nikfarjam, "Room temperature carbon monoxide sensor using ITO/n-GaAs Schottky contact," Sens. Actuators B, Chem., vol. 101, no. 3, pp. 394-400, Jul. 2004.
25. S. Nakagomi, A. L. Spetz, I. Lundstrom, and P. Tobies, "Electrical characterisation of CO sensitive high temperature sensor diode based on catalytic metal gate-insulator-silicon carbide structures," IEEE Sens. J., vol. 2, no. 5, pp. 379-386, Oct. 2002.
26. A. Salehi, A. Nikfarjam, and D.-J. Kalantari, "Pd/porous-GaAs Schottky contact for hydrogen sensing applications," Sens. Actuators B, Chem., vol. 113, no. 1, pp. 419-427, Jan. 2006.
27. 2 thin films," Sens. Actuators B, Chem., vol. 96, no. 3, pp. 477-481, Dec. 2003.
28. D. G. Yarkin, "Impedance of humidity sensitive metal/porous silicon/n-Si structures," Sens. Actuators A, Phys., vol. 107, no. 1, pp. 1-6, Oct. 2003.
29. J. H. Bore, The Shapes of Capillaries in the Structure and Properties of Porous Materials. London, U.K.: Butterworth, 1958, pp. 68-194.
30. E. H. Rhodoric and R. H. Williams, Metal Semiconductor Contacts, 2nd ed. Oxford, U.K.: Oxford Science, 1988, p. 39.
31. H.-Y. Nie and Y. Mannichi, "Pd-on GaAs Schottky contact: Its barrier height and response to hydrogen," Jpn. J. Appl. Phys., vol. 30, no. 5, pp. 906-913, May 1991.
32. B. S. Kang, S. Kim, F. Ren, B. P. Gila, C. R. Abernathy, and S. J. Pearton, "Comparison of MOS and Schottky W/Pt-GaN diodes for hydrogen detection," Sens. Actuators B, Chem., vol. 104, no. 2, pp. 232-236, Jan. 2005.
33. H. Seo, T. Endoh, H. Fukuda, and S. Nomura, "Highly sensitive MOSFET gas sensor with porous platinum gate electrode," Electron. Lett., vol. 33, no. 6, pp. 535-536, Mar. 1997.
34. 3 based MRISiC hydrogen gas sensors," Sens, Actuators B, Chem., vol. 103, no. 1/2, pp. 129-135, Sep. 2004.
35. W.-C. Liu, H.-J. Pan, H.-I. Chen, K.-W. Lin, S.-Y. Cheng, and K.-H. Yu, "Hydrogen sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1938-1944, Sep. 2001.
36. K.-W. Lin, H. I. Chen, H.-M. Chuang, C.-Y. Chen, C.-T. Lu, C.-C. Cheng, and W.-C. Liv, "Characteristics of Pd/InGaP Schottky diode hydrogen sensors," IEEE Sensors J., vol. 4, no. 1, pp. 72-79, Feb. 2004.
37. H.-I. Chen and Y. I. Chou, "Evaluation of the perfection of the Pd-InP Schottky interface from the energy view point of hydrogen absorbates," Semicond. Sci. Technol., vol. 19, no. 1, pp. 39-44, Jan. 2004.