Enhancement of temperature sensitivity for metal-oxide-semiconductor (MOS) tunneling temperature sensors by utilizing hafnium oxide (HfO 2) film added on silicon dioxide (SiO 2)

IEEE Sensors Journal

Volumn 6, Issue 6, 2006, Pages 1468-1472

  Wang, Tsung Miau ^b   Chang, Chia Hua ^b   Hwu, Jenn Gwo ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Hafnium oxide (HfO 2); Metal oxide semiconductor (MOS) capacitors; Saturation current; Silicon dioxide (SiO 2); Temperature detecting devices

Indexed keywords

HAFNIUM OXIDE FILMS; SATURATION CURRENT; SILICON SUBSTRATE; TEMPERATURE DETECTING DEVICES;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; HAFNIUM COMPOUNDS; SILICA; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

MOS CAPACITORS;

EID: 33845659567     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2006.884424     Document Type: Article

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