Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 751-754

  Yang, C W ^a   Fang, Y K ^a   Ting, S F ^a   Chen, C H ^a   Wang, W D ^a   Lin, T Y ^a   Wang, M F ^b   Yu, M C ^b   Chen, C L ^b   Yao, L G ^b   Chen, S C ^b   Yu, C H ^b   Liang, M S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Barrier height; Direct tunneling; Gate leakage current; Nitrided oxide

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS;

GATE LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 0037392491     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00357-X     Document Type: Article

References (7)

1. Yang N., Kirklen Henson W., Wortman J.J. A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides. IEEE Trans. Electron Dev. 47(8):2000;1636-1644.
2. Shi Y., Ma T.P., Prasad S., Dhanda S. Polarity dependent gate tunneling current in dual-gate CMOSFET's. IEEE Trans. Electron Dev. 45(11):1998;2355-2360.
3. Guo X., Ma T.P. Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content. IEEE Electron Dev. Lett. 19(6):1998;207-209.
4. Han L.K., Yoon G.W., Kim J., Yan J., Kwong D.L. Formation of high quality ultrathin oxide/nitride (ON) stacked capacitors by in situ multiple rapicd thermal processing. IEEE Electron Dev. Lett. 16(8):1995;348-350.
5. National Technology Roadmap for Semiconductors, Semiconductor Industry Assoc., Austin, TX, 1997.
6. Chia Yeo Y., Lu Q., Chin Lee W., King T.-J., Hu C., Wang X.et al. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric. IEEE Electron Dev. Lett. 21(11):2000;540-542.
7. Yang H., Niimi H., Keister J.W., Lucovsky G., Rowe J.E. The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices. IEEE Electron Dev. Lett. 21(2):2000;76-78.