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Volumn 19, Issue 11, 2004, Pages 1213-1219

Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applications

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC POTENTIAL; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; PASSIVATION; PHOTOCURRENTS;

EID: 9144226014     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/001     Document Type: Article
Times cited : (10)

References (12)
  • 1
    • 0035397414 scopus 로고    scopus 로고
    • Evidence of optical gain improvement in AlGaAs/GaAs heterojunction phototransistors using an emitter shoulder structure
    • Bansropun S, Woods R C and Roberts J S 2001 Evidence of optical gain improvement in AlGaAs/GaAs heterojunction phototransistors using an emitter shoulder structure IEEE Trans. Electron Devices 48 1333
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 1333
    • Bansropun, S.1    Woods, R.C.2    Roberts, J.S.3
  • 4
    • 0028730689 scopus 로고
    • High-speed InP-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector
    • Fukano H, Takanashi Y and Fujimoto M 1994 High-speed InP-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector IEEE J. Quantum Electron. 30 2889
    • (1994) IEEE J. Quantum Electron. , vol.30 , pp. 2889
    • Fukano, H.1    Takanashi, Y.2    Fujimoto, M.3
  • 5
    • 0027699126 scopus 로고
    • High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure
    • Chandrasekhar S, Lunardi L M, Gnauck A H, Hamm R A and Qua G J 1993 High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure IEEE Photon. Technol. Lett. 5 1316
    • (1993) IEEE Photon. Technol. Lett. , vol.5 , pp. 1316
    • Chandrasekhar, S.1    Lunardi, L.M.2    Gnauck, A.H.3    Hamm, R.A.4    Qua, G.J.5
  • 6
    • 0032095211 scopus 로고    scopus 로고
    • Performance enhancement of GaInP/GaAs heterojunction bipolar phototransistors using dc base bias
    • Sridhara R, Frimel S M, Roenker K P, Pan N and Elliott J 1998 Performance enhancement of GaInP/GaAs heterojunction bipolar phototransistors using dc base bias J. Lightwave Technol. 16 1101
    • (1998) J. Lightwave Technol. , vol.16 , pp. 1101
    • Sridhara, R.1    Frimel, S.M.2    Roenker, K.P.3    Pan, N.4    Elliott, J.5
  • 9
    • 0345829245 scopus 로고    scopus 로고
    • Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBT/CEHPT)
    • Tan S W, Chen W T, Chu M Y and Lour W S 2003 Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBT/CEHPT) Superlatt. Microstruct. 33 209
    • (2003) Superlatt. Microstruct. , vol.33 , pp. 209
    • Tan, S.W.1    Chen, W.T.2    Chu, M.Y.3    Lour, W.S.4
  • 10
    • 0029505854 scopus 로고
    • Ultra-wideband monolithic photoreceivers using HBT-compatible HPT's with novel base circuits, and simultaneously integrated with an HBT amplifier
    • Kamitsuna H 1995 Ultra-wideband monolithic photoreceivers using HBT-compatible HPT's with novel base circuits, and simultaneously integrated with an HBT amplifier J. Lightwave Technol. 13 2301
    • (1995) J. Lightwave Technol. , vol.13 , pp. 2301
    • Kamitsuna, H.1
  • 12
    • 0025508937 scopus 로고
    • The dc characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling
    • Hafizi M E, Crowell C R and Grupen M E 1990 The dc characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling IEEE Trans. Electron Devices 37 2121
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 2121
    • Hafizi, M.E.1    Crowell, C.R.2    Grupen, M.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.