Properties and suitability of 4H-SiC epitaxial layers grown at different CVD systems for high voltage applications

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 181-184

  Thomas, B ^a   Bartsch, W ^a   Stein, R ^a   Schorner R ^a   Stephani, D ^a  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

Cold Wall CVD; Epitaxial Layers; Hot Wall CVD; Pin Diodes; SiC; Silicon Carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; SEMICONDUCTOR DIODES; SILICON WAFERS; THERMAL GRADIENTS;

COLD WALL CVD; EPITAXIAL LAYERS; HOT WALL CVD; PIN-DIODES;

SILICON CARBIDE;

EID: 8744311644     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.181     Document Type: Conference Paper

References (6)

1. W. Bartsch, H. Mitlehner, R. Schoerner, K. Dohnke, B. Thomas, R. Stein and D. Stephani, Proc. EPE 2003, Toulouse, France, CD publication ISBN 90-75815-07-7, paper 696
2. J.A. Cooper, M.R. Melloch, R. Singh, A. Agarwal, J.W. Palmour, IEEE Transactions on Electron Devices Vol. 49 4 (2002), p.658
3. P. Friedrichs, H. Mitlehner, R. Schoerner, K.O. Dohnke, R. Elpelt, D. Stephani, Proc. EPE 2001, Graz, Austria, CD publication ISBN:90-75815-06-9
4. R. Rupp, A. Wiedenhofer, D. Stephani, Mat. Sci. and Engineering. B61-62 (1999), p.125
5. Ö. Danielsson, A. Henry, E. Janzen, J. Cryst. Growth 243 (2002), p.170
6. W. Bartsch, R. Schoerner, H. Mitlehner, K.O. Dohnke, B. Thomas, D. Stephani, Mat. Sci. Forum Vols.433-436 (2003), p.895