3C-SiC(100) homoepitaxial growth by chemical vapor deposition and schottky barrier junction characteristics

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 275-278

  Ishida, Y ^a   Kushibe, M ^a   Takahashi, T ^a   Okumura, H ^a   Yoshida, S ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

3C SiC; Homoepitaxial growth; Schottky barrier junctions

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPILAYERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

HOMOEPITAXIAL GROWTH; SCHOTTKY BARRIER JUNCTIONS; 3C-SIC; DIFFERENTIAL INTERFERENCE CONTRAST MICROSCOPY; JUNCTION PROPERTIES; SCHOTTKY BARRIER STRUCTURES; SCHOTTKY BARRIERS; THEORETICAL LIMITS;

EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES;

EID: 0041753955     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.275     Document Type: Article

References (6)

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