Elongated shaped Si island formation on 3C-SiC by chemical vapor deposition and its application to antiphase domain observation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3470-3474

  Ishida, Yuuki ^a   Takahashi, Tetsuo ^a   Okumura, Hajime ^a   Sekigawa, Toshihiro ^a   Yoshida, Sadafumi ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

ANTIPHASE DOMAINS (APD); HETEROEPITAXIAL GROWTH;

SEMICONDUCTING SILICON;

EID: 0032656398     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3470     Document Type: Article

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