Synthesis and optical properties of In-doped GaN nanocrystals

Solid State Communications

Volumn 141, Issue 6, 2007, Pages 325-328

  Bhat, S V ^a   Biswas, Kanishka ^a   Rao, C N R ^a  

^a NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

A. Nanostructures; B. Chemical synthesis; D. Optical properties

Indexed keywords

DOPING (ADDITIVES); GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SYNTHESIS (CHEMICAL);

BAND ENERGY; HEXAMETHYLDISILAZANE; NITRIDING REAGENT; RAMAN BANDS; SOLVOTHERMAL METHOD;

NANOSTRUCTURED MATERIALS;

EID: 33845565172     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.11.013     Document Type: Article

References (21)

1. Nakamura S., Senoh M., Iwasa N., and Nagahama S. Jpn. J. Appl. Phys. 34 (1995) L797
2. Okamoto K., Niki I., Shvartser A., Narukawa Y., Mukai T., and Scherer A. Nat. Mater. 3 (2004) 601
3. Stricht W.V., Moerman I., Demeester P., Considine L., Thrush E.J., and Crawley J.A. MRS Internet J. Nitride Semicond. Res. 2 (1997) 16
4. Piner E.L., Mclntosh F.G., Roberts J.C., Aumer M.E., Joshkin V.A., Bedair S.M., and El-Masry N.A. MRS Internet J. Nitride Semicond. Res. 1 (1996) 43
5. Feng S.-W., Tang T.-Y., Lu Y.-C., Liu S.-J., Lin E.-C., Yang C.C., ma K.-J., Shen C.-H., Chen L.C., Kim K.H., Lin J.Y., and Jiang H.X. J. Appl. Phys. 95 (2004) 5388
6. Moon Y.T., Kim D.J., Park J.-S., Oh J.-T., Lee J.-M., Ok Y.-W., Kim H., and Park S.-J. Appl. Phys. Lett. 79 (2001) 599
7. Kim M.H., Cho J.K., Lee I.H., and Park S.J. Phys. Status Solidi (a) 176 (1999) 269
8. Feng Z.C., Liu W., Chua S.J., Yu J.W., Yang C.C., Yang T.R., and Zhao J. Thin Solid Films 498 (2006) 118
9. Cheung M.C., Namkoong G., Chen F., Furis M., Pudavar H.E., Cartwright A.N., and Doolittle W.A. Phys. Status Solidi (c) 2 (2005) 2779
10. Lemos V., Silveira E., Leite J.R., Tabata A., Trentin R., Scolfaro L.M.R., Frey T., As D.J., Schikora D., and Lischka K. Phys. Rev. Lett. 84 (2000) 3666
11. Damilano B., Grandjean N., Dalmasso S., and Massies J. Appl. Phys. Lett. 75 (1999) 3751
12. Ji L.W., Su Y.-K., Chang S.-J., Wu L.-W., Fang T.-H., Xue Q.-K., Lai W.-C., and Chiou Y.-Z. Mater. Lett. 57 (2003) 4218
13. Tu R.-C., Tun C.-J., Chuo C.-C., Lee B.-C., Tsai C.-E., Wang T.-C., Chi J., Lee C.-P., and Chi G.-C. Jpn. J. Appl. Phys. 43 (2004) L264
14. Sardar K., and Rao C.N.R. Adv. Mater. 16 (2004) 425
15. Grocholl L., Wang J., and Gillan E.G. Chem. Mater. 13 (2001) 4290
16. Gonsalves K.E., Rangarajan S.P., and Carlson G. Appl. Phys. Lett. 71 (1997) 2175
17. Kirillov D., Lee H., and Harris Jr. J.S. J. Appl. Phys. 80 (1996) 4058
18. Kuball M., Pomeroy J.W., Fouquet M.W., Butcher K.S.A., Lu H., and Schaff W.J. J. Cryst. Growth 269 (2004) 59
19. Tabata A., Leite J.R., Lima A.P., Silveira E., Lemos V., Frey T., As D.J., Schikora D., and Lischka K. Appl. Phys. Lett. 75 (1999) 1095
20. Martin R.W., Edwards P.R., O'Donnell K.P., Mackay E.G., and Watson I.M. Phys. Status Solidi (a) 192 (2002) 117
21. O'Donnell K.P., Breitkopf T., Kalt H., Van der Stricht W., Moerman I., Demeester P., and Middleton P.G. Appl. Phys. Lett. 70 (1997) 1843