New InGaP/GaAs double delta-doped heterojunction bipolar transistor (D3HBT)

Thin Solid Films

Volumn 345, Issue 2, 1999, Pages 270-272

  Cheng, Shiou Ying ^a   Wang, Wei Chou ^a   Chang, Wen Lung ^a   Chen, Jing Yuh ^a   Pan, His Jen ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

DOUBLE DELTA-DOPED HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032629943     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01422-9     Document Type: Article

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