SCOPUS 정보 검색 플랫폼

Volumn 30, Issue 2, 2001, Pages 111-117

Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike

Author keywords

Double heterojunction; Electron blocking effect; Heterostructure emitter

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

ELECTRON BLOCKING EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035414519 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.2001.0993 Document Type: Article

Times cited : (1)

References (12)

1
- 36449006870
- 0.52P measured under hydrostatic pressure
- (1991) Appl. Phys. Lett. , vol.58 , pp. 744
- Chen, J.¹ Sites, J.R.² Spain, I.L.³ Hafich, M.J.⁴ Robinson, G.Y.⁵

2
- 21544482706
- Determination of valence and conduction-band discontinuities at the (Ga, In)P/GaAs heterojunction by C-V profiling
- (1987) J. Appl. Phys. , vol.61 , pp. 643
- Rao, M.A.¹ Caine, E.J.² Kroemer, H.³ Long, S.I.⁴ Babic, D.I.⁵

3
- 0000536410
- Interface properties for GaAs/InGaAIP heterojunctions by the capacitance-voltage profiling technique
- (1987) Appl. Phys. Lett. , vol.50 , pp. 906
- Watanabe, M.O.¹ Ohba, Y.²

4
- 0028427982
- Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistor
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 643
- Yang, Y.F.¹ Hsu, C.C.² Yang, E.S.³

5
- 0031122939
- 0.85As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 150
- Lin, Y.S.¹ Sun, T.P.² Lu, S.S.³

6
- 0026916587
- 0.51P/GaAs tunnelling emitter bipolar transistors grown by gas-source molecular beam epitaxy
- (1992) IEEE Electron Device Lett. , vol.13 , pp. 468
- Lu, S.S.¹ Wu, C.C.²

7
- 0032178870
- Influence of δ-doping sheet and setback layer on the performance of InGaP/GaAs heterojunction bipolar transistor
- (1998) Semicond. Sci. Technol. , vol.13 , pp. 1187
- Cheng, S.Y.¹ Pan, H.J.² Shie, Y.H.³ Chen, J.Y.⁴ Chang, W.L.⁵ Wang, W.C.⁶ Lin, P.H.⁷ Liu, W.C.⁸

8
- 0031125547
- A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR) switching for multiple-valued logic application
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 520
- Liu, W.C.¹ Tsai II, J.² Lour, W.S.³ Laih, L.W.⁴ Thei, K.B.⁵ Wu, C.Z.⁶

9
- 0027685526
- Characterization of GaInP/GaAs double heterojunction bipolar transistors with differential collector designs
- (1993) IEEE Electron. Lett. , vol.29 , pp. 1881
- Song, J.-J.¹ Caneau, C.² Hong, W.-P.³ Chough, K.B.⁴

12
- 0022102528
- Direct measurement of the potential spike energy in AIGaAs/GaAs single-heterojunction bipolar transistors
- (1985) IEEE Electron Device Lett. , vol.6 , pp. 431
- Lin, H.H.¹ Lee, S.C.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.