Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes

Materials Science and Engineering B

Volumn 37, Issue 1-3, 1996, Pages 172-176

  Suh, Kyung Soo ^a   Lee, Jong Lam ^a   Park, Hyung Ho ^b   Kim, Chan Ho ^c   Lee, Jae Jin ^a   Nam, Kee Soo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Yonsei University   (South Korea)

^c Sangji University   (South Korea)

Author keywords

Gallium arsenide; Passivation effects; Thermal stability; X ray photoelectron spectroscopy

Indexed keywords

EID: 0042037668     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01480-2     Document Type: Article

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