Quantitative depth profiling of photoacid generators in photoresist materials by near-edge X-ray absorption fine structure spectroscopy

Applied Surface Science

Volumn 253, Issue 2, 2006, Pages 1010-1014

  Prabhu, Vivek M ^a   Sambasivan, Sharadha ^a   Fischer, Daniel ^a   Sundberg, Linda K ^b   Allen, Robert D ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Immerison lithography; Lithography; Near edge X ray absorption fine spectroscopy; NEXAFS; Photoresist; Segregation; Thin film

Indexed keywords

ABSORPTION SPECTROSCOPY; LITHOGRAPHY; PHOTORESISTS; SEGREGATION (METALLOGRAPHY); SURFACE TREATMENT;

IMMERISON LITHOGRAPHY; NEAR EDGE X-RAY ABSORPTION FINE SPECTROSCOPY; NEXAFS; PHOTOACID GENERATORS;

THIN FILMS;

EID: 33845387670     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.03.089     Document Type: Article

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