Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1-xGex

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 772-776

  Ulyashin, A G ^a   Abrosimov, N V ^b   Bentzen, A ^c,d   Suphellen, A ^d   Sauar, E ^d   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c INSTITUTE FOR ENERGY TECHNOLOGY   (Norway)

^d Renewable Energy Corporation AS   (Norway)

Author keywords

Gettering; Lifetime; Silicon; Silicon germanium alloys

Indexed keywords

COMPOSITION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DIFFUSION; HYDROGENATION; MICROWAVES; PHOTOCONDUCTIVITY; SEMICONDUCTING GERMANIUM;

DIFFUSION GETTERING; MICROWAVE PHOTO CONDUCTANCE DECAY; QUASI STEADY STATE PHOTOCONDUCTANCE (QSSPC); SILICON GERMANIUM ALLOYS;

SILICON ALLOYS;

EID: 33845287657     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.021     Document Type: Article

References (27)

1. Healy S.A., and Green M.A. Sol Energy Mater Sol Cells 28 (1992) 273
2. Braunstein R., Moore A.R., and Herman F. Phys Rev 109 (1958) 695
3. Abrosimov N.V., Rossolenko S.N., Alex V., Gerhardt A., and Schroder W. J Cryst Growth 166 (1996) 657
4. Yonenaga I. J Cryst Growth 198/199 (1999) 404
5. Wollweber J., Schulz D., and Schroder W. J Cryst Growth 158 (1996) 166
6. Dold P., Barz A., Recha S., Pressel K., Franz M., and Benz K.W. J Cryst Growth 192 (1998) 125
7. Losada BR, Moehlecke A, Ruiz JM, Luque A, Wollweber J, Abrosimov N, Schulz D, Schroder W, Rossolenko S, Proceedings of the 13th EPVSEC, vol. 1, 1995. p. 925.
8. Said K., Poortmans J., Caymax M., Nijs J.F., Debarge L., Christoffel E., et al. IEEE Trans Electron Dev 46 (1999) 2103
9. Pan W., Fujiwara K., Usami N., Ujihara T., Nakajima K., and Shimokawa R. J Appl Phys 96 (2004) 1238
10. Nakajima K., Kodama S., Miyashita S., Sazaki G., and Hiyamizu S. J Cryst Growth 205 (1999) 270
11. Yablonovich E., Allara D., Chang C., Gmitter T., and Bright T.B. Phys Rev Lett 57 (1986) 249
12. Soppe W., Rieffe H., and Weeber A. Progr Photovolt Res Appl 13 (2005) 551
13. Dauwe S, Schmidt J, Hezel R, Proc 29th IEEE PVSC, 2002, p. 1246.
14. Lee J., and Glunz S.W. Sol Energy Mater Sol Cells 90 (2006) 82
15. Brendel W, Nguyen V, Brenner K, Rostan P, Grohe A, Scheiderlochner E, Preu R, Rau U, Palfinger G, Werner JH. In: Proceedings of the 20th EPVSEC, vol. 1, 2005. p. 745.
16. Bentzen A, Ulyashin A, Suphellen A, Sauar E, Grambole D, Wright DN, Marstein E, Svensson BG, Holt A. In: Digest of 15th international PVSEC, 2005. p. 316.
17. Plagwitz H, Schaper M, Wolf A, Meyer R, Schmidt J, Terheiden B, Brendel R. In: 20th EPVSEC, vol. 1, 2005. p. 725.
18. Losada B.R., Moehlecke A., Lagos R., and Luque A. Appl Phys Lett 67 (1995) 1894
19. Ulyashin A, Scherff M, Kozicki A, Job R, Fahrner W, Bilyalov R, Matic Z, Poortmans J. In: Proceedings of the international conference on PV in Europe, vol. 1, 2002. p. 103.
20. Ulyashin A, Bilyalov R, Scherff M, Job R, Fahrner WR, Poortmans J. In: Proceedings of the third WCPEC, vol. 2, 2003. p. 1088.
21. Ulyashin A, Bilyalov R, Dekkers HFW, De Wolf S, Van Nieuwenhuysen K, Carnel L, Beaucarne G, Poortmans J. In: Proceedings of the 19th EPVSEC, vol. 1, 2004. p. 746.
22. Ulyashin A, Simoen E, Carnel L, De Wolf S, Dekkers H, Rafi JM, Beaucarne G, Poortmans J, Claeys C. In: High Purity Silicon VIII, Proceedings of the ECS symposium, vol. 2004-05, 2004. p. 334.
23. Higgs V., Chin F., Wang X., Mosalski J., and Beanland R. J Phys: Condens Matter 12 (2000) 10105
24. x:H/a-Si:H double passivation layer on c-Si substrate, WCPEC-4, 2006, in press.
25. Sinton R.A., and Cuevas A. Appl Phys Lett 69 (1996) 2510
26. Bentzen A., Holt A., Christensen J.S., and Svensson B.F. J Appl Phys 99 (2006) 064502
27. Mesli A., Vileno B., Eckert C., Slaoui A., Pedersen C., Larsen N., et al. Phys Rev B 66 (2002) 045206