Minority currier lifetime improvement in p-type silicon by oxygen related centers gettering at low temperatures: Application to the heterojunction solar cell processing

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1088-1091

  Ulyashin, Alexander ^a   Bilyalov, Renat ^b   Brück, Alexander ^a   Scherff, Maximilian ^a   Job, Reinhart ^a   Fahrner, Wolfgang ^a   Poortmans, Jef ^a  

^a UNIVERSITY OF HAGEN   (Germany)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

P-TYPE SILICONS; PHOTOCONDUCTIVITY DECAY; SOLAR CELL PROCESSING;

DIFFUSION; ELECTRIC POTENTIAL; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; SILICON WAFERS; THERMAL EFFECTS;

SILICON SOLAR CELLS;

EID: 6344287579     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)

1. K. Graff, H. Fisher, "Carrier lifetime in silicon and its impact on solar cells characteristics" in: "Solar energy conversion. Solid-State Physics Aspects", (Springer-Verlag, Berlin, 1979) p. 173
2. th European Photovoltaic Solar Energy Conference, (Glasgow, 2000) p.1343.
3. J. Lee, S. Peters, S. Rein, S. Glunz, "Improvement of Charge Minority-Carrier Lifetime in p (Boron)-type Czochralski Silicon by Rapid Thermal Annealing" Prog. Photovolt.: Res. Appl. 8, 503 (2000).
4. th International Symposium on High Purity Silicon IV, (San Antonio, 1996) p.450.
5. th IEEE Photovoltaic Specialists Conference, (Anaheim, 1997) p. 13.
6. st World Conference on Photovoltaic Energy Conversion. (Hawaii, 1994) p.1219.
7. M. Taguchi, K. Kawamoto, S. Tsuge, T. Baba, H.Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama, O. Octa, "HIT™ cells - high-efficiency crystalline Si cells with novel structure", Progr. Photovolt. 8, 503 (2000).
8. th European Photovoltaic Solar Energy Conference, (Glasgow, 2000) p.1197.
9. M. Mimura, S. Ishikava, T. Saitoh, "Effect of thermal annealing on minority-carrier lifetimes in multicrystalline Si wafers", Sol. Energy Mater. Sol. Cell 65, 459 (2001).
10. D. Karg, G. Pensl, M. Schulz, C. Hässler, W. Koch, "Oxygen-Related Defect Centers in Solar-Grade, Multicrystalline Silicon, A Reservoir of Lifetime Killers" Phys. Stat. Sol. (b) 222, 379 (2000).
11. C. Hassler, H. Höfs, W. Koch, G. Stollwerck, A. Müller, D. Karg, G. Pensl, "Formation and annihilation of oxygen donors in multicrystalline silicon for solar cells", Mater. Sci. Eng. B 71, 39 (2000).
12. M. Scherff, A. Froitzheim, A.G. Ulyashin, M. Schmidt, W.R. Fahrner, W. Fuhs, "16.2% efficiency for anorphous/crystalline heterojunction solar cell on flat p-type silicon wafer", Proceedings of the International Conference PV in Europe, (Rome, 2002) p. 216.
13. F. Shimura (Ed.) "Oxygen in Silicon", (Academic Press. New York, 1994).
14. R. Murray, A.R. Brown, R.C. Newman "Enhanced Thermal Donor Formation and Oxygen Diffusion in Silicon Exposed to a Hydrogen Plasma", Mat. Sci. Eng. B 4, 299 (1989).
15. H.J. Stein, S.K. Hahn "Hydrogen-accelerated thermal donor formation in Czochralski silicon", Appl. Phys. Lett. 56, 63 (1990).
16. A.G. Ulyashin, Y.A. Bumay, R. Job, W.R. Fahrner, "Formation of deep p-n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment", Appl. Phys. A 66, 399 (1998).
17. A. Hara, "Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals", Jpn.J. Appl. Phys. 34, 5483 (1995).
18. K. Graff, H. Pieper, "The carrier lifetime of heat-treated silicon crystals", J. Electron Mater. 4, 281 (1975).
19. A. Ulyashin, M. Scherff, A. Kozicki, R. Job, W. Fahrner, R. Bilyalov, Z. Matic, J. Poortmans, "The influence of hydrogenation on the effective lifetime of silicon wafers: peculiarities at low-temperature treatments", Proceedings of the International Conference PV in Europe, (Rome, 2002) p. 103.
20. E. Yablonovich, D. Allara, C. Chang, T. Gmitter, T.B. Bright, "Unusually Low Surface-Recombination Velosity on Silicon and Germanium Surfaces", Phys. Rev. Lett. 57, 249 (1986).