The junction edge leakage current and the blocking I-V characteristics of commercial glass passivated thyristor devices

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2005, Pages 447-450

  Obreja, Vasile ^a   Manea, Elena ^a   Codreanu, Cecilia ^a   Avram, Marioara ^a   Podaru, Cecilia ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GLASS; SEMICONDUCTOR JUNCTIONS; THYRISTORS;

JUNCTION EDGE; SATURATION TENDENCY; THYRISTOR DEVICES;

LEAKAGE CURRENTS;

EID: 33845287273     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2005.1558823     Document Type: Conference Paper

References (7)

1. V.V.N. Obreja, C. Codreanu, K.I. Nuttall, O. Buiu, C. Podaru, "The Operation Temperature of Silicon Power Thyristors and the Blocking Leakage Current" in Proceedings 35th IEEE Power Electronics Specialists Conference(PESC2004), June 2004, Aachen, Germany, pp.2990-2993
2. V.V.N. Obreja, C. Codreanu, K.I. Nuttall, O Buiu, "Reverse Current Instability of Power Silicon Diodes (Thyristors) at High Temperature and the Junction Surface Leakage Current" in Proceedings IEEE International Symposium on Industrial Electronics (ISIE2005), June 2005, Dubrovnik, Croatia
3. th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in M icro-electronics and Micro-systems (EuroSIME2005), April 2005, Berlin, pp. 584-589
4. th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2005), June-July 2005, Singapore
5. V.V.N. Obreja, C. Codreanu, K.I. Nuttall, "Reverse Leakage Current Instability of Power Fast Switching Diodes Operating at High Junction Temperature" in Proceedings 36th IEEE Power Electronics Specialists Conference(PESC2005), June 2005, Recipe, Brazil, pp. 537-540
6. V.V.N. Obreja, "On the Leakage Current of Present-Day Manufactured Semiconductor Junctions", Solid State Electronics, vol.49, No. 1, pp.49 - 57, 2000
7. V.V.N. Obreja, "An Experimental Investigation on the Nature of Reverse Current of Power Silicon PN Junctions", IEEE Trans. Electron Devices, vol. ED-49, pp. 155-163, 2002