The operation temperature of silicon power thyristors and the blocking leakage current

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2004, Pages 2990-2993

  Obreja, V V N ^a   Codreanu, C ^a   Podaru, C ^a   Nuttall, K I ^b   Buiu, O ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION TEMPERATURE; LEAKAGE CURRENT BLOCKING; SILICON POWER DIODES;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SILICON; THERMAL EFFECTS;

THYRISTORS;

EID: 8744239281     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2004.1355310     Document Type: Conference Paper

References (7)

1. th International Symposium on Power Semiconductor Devices and ICs (ISPSD03), Cambridge, UK, 2003, pp. 122-125
2. th European Power Electronics and Applications Conference (EPE2003), Toulouse, France, 2003
3. K.I.Nuttall, V.V.N. Obreja, "Improving the reliability of power semiconductor diodes operated above 150-175 °C junction temperature," in Proc. 24th International Power Electronics Conference (PCIM2003), Nuremberg, Germany, 2003
4. K.I.Nuttall, O. Buiu, V.V.N.Obreja " Surface leakage current related failure of power silicon devices operated at high junction temperature," Microelectronics and Reliability, vol.43, No. 9-11, pp. 1913-1918,Nov. 2003.
5. V.V.N. Obreja, K.I. Nuttall, "On the high temperature operation of high voltage power devices," in Proc. 25th International Semiconductor Conference (CAS2002), Sinaia, Romania, 2002
6. V.V.N. Obreja, "An experimental investigation on the nature of reverse current of power silicon PN junctions," IEEE Trans. Electron Devices, vol. ED-44, pp. 155-163, Jan.2002
7. V.V.N. Obreja, "On the leakage current of present-day manufactured semiconductor junctions," Solid-State Electronics, vol.44, No.l, pp.49-57, Jan.2000.