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Volumn 2005, Issue , 2005, Pages 537-540

Reverse leakage current instability of power fast switching diodes operating at high junction temperature

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; POWER ELECTRONICS; SEMICONDUCTOR JUNCTIONS; SWITCHING SYSTEMS; TEMPERATURE MEASUREMENT;

EID: 33845314664     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2005.1581677     Document Type: Conference Paper
Times cited : (15)

References (10)
  • 1
    • 0033743269 scopus 로고    scopus 로고
    • New generation 1200V power module with trench IGBT and supersoft recovery diode and its evaluation
    • H. Iwamoto et al, "New generation 1200V power module with trench IGBT and supersoft recovery diode and its evaluation" IEE Proceedings on Electric Power Applications, vol.147, No.3 pp.153-158, 2000
    • (2000) IEE Proceedings on Electric Power Applications , vol.147 , Issue.3 , pp. 153-158
    • Iwamoto, H.1
  • 7
    • 0033639909 scopus 로고    scopus 로고
    • On the leakage current of present-day manufactured semiconductor junctions
    • January
    • V.V.N.Obreja, "On the leakage current of present-day manufactured semiconductor junctions" , Solid-State Electronics, vol.44, pp. 49-57, January 2000
    • (2000) Solid-State Electronics , vol.44 , pp. 49-57
    • Obreja, V.V.N.1
  • 8
    • 0036256936 scopus 로고    scopus 로고
    • An experimental investigation on the nature of reverse current of power silicon PN junctions
    • January
    • V.V.N.Obreja, "An experimental investigation on the nature of reverse current of power silicon PN junctions," IEEE Trans. Electron Devices, vol. ED-49, pp. 155-163, January 2002
    • (2002) IEEE Trans. Electron Devices , vol.ED-49 , pp. 155-163
    • Obreja, V.V.N.1
  • 10
    • 0042694286 scopus 로고    scopus 로고
    • Surface leakage current related failure of power silicon devices operated at high junction temperature
    • Sept -Nov
    • K.I. Nuttall, O. Buiu and V.V.N. Obreja, "Surface leakage current related failure of power silicon devices operated at high junction temperature" Microelectronics Reliability, vol.43, pp. 1913-1918, Sept -Nov 2003
    • (2003) Microelectronics Reliability , vol.43 , pp. 1913-1918
    • Nuttall, K.I.1    Buiu, O.2    Obreja, V.V.N.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.