Reverse current instability of power silicon diodes (thyristors) at high temperature and the junction surface leakage current

IEEE International Symposium on Industrial Electronics

Volumn II, Issue , 2005, Pages 417-422

  Obreja, V V N ^a   Codreanu, C ^a   Nuttall, K I ^b   Buiu, O ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON; THYRISTORS;

POWER SILICON DIODES; REVERSE CURRENTS; SURFACE LEAKAGE; VOLTAGE RATINGS;

SEMICONDUCTOR DIODES;

EID: 33748363079     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISIE.2005.1528953     Document Type: Conference Paper

References (9)

1. 4 passivation of high power rectifiers", IEEE Trans. Electron Devices, vol.17, pp.797-800, 1970
2. S. Salkalachen, N. Krishnan, S. Krishnan, H. Satyamurthy and K.Srinivas "Edge passivation and related electrical stability in silicon power devices", IEEE Trans. Semiconductor Manufacturing, vol.3, pp 12-17, 1990
3. th International Symposium on Power Semiconductor Devices and ICs(ISPSD99), pp. 189-192, 1999
4. V.V.N. Obreja, "On the leakage current of present-day manufactured semiconductor junctions" Solid-State Electronics, vol.44, pp. 49-57, January, 2000
5. V.V.N.Obreja, "An experimental investigation on the nature of reverse current of power silicon PN junctions", IEEE Trans. Electron Devices, vol.49, pp. 155-163, January, 2002
6. th European European Power Electronics and Applications Conference(EPE2003),Toulouse, France, Sept. 2003
7. V.V.N. Obreja, O. Buiu, K.I. Nuttall, C.Codreanu, M.L. Sung, P.Pei, "Catastrophic failure of power silicon PN junctions at high temperature induced by the surface leakage reverse current" in Proceedings 11th IEEE Intern. Symp. on Physical and Failure Analysis of Integrated Circuits, (IPFA2004), Hsinchu, Taiwan, July, 2004
8. K.I. Nuttall, O. Buiu and V.V.N. Obreja, "Surface leakage current related failure of power silicon devices operated at high junction temperature" Microelectronics Reliability, vol.43, pp.1913-1918, Sept-Nov 2003
9. th International Semiconductor Conference(CAS2004) pp. 315-318, Sinaia, Romania, Oct. 2004