On the leakage current of present-day manufactured semiconductor junctions

Solid-State Electronics

Volumn 44, Issue 1, 2000, Pages 49-57

  Obreja, Vasile V N ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

REVERSE LEAKAGE CURRENTS;

SEMICONDUCTOR JUNCTIONS;

EID: 0033639909     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00208-7     Document Type: Article

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