Peaks in temperature distribution over the area of operating power semiconductor junctions related to the surface leakage current

Proceedings of the 6th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems - EuroSimE 2005

Volumn 2005, Issue , 2005, Pages 584-589

  Obreja, Vasile V N ^a   Codreanu, Cecilia ^a   Nuttall, Keith I ^b   Codreanu, Irina ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC POTENTIAL; HEAT RESISTANCE; INFRARED IMAGING; LEAKAGE CURRENTS; THERMAL EFFECTS;

INFRARED IMAGING MICROSCOPY; JUNCTION TEMPERATURE DISTRIBUTION; PN JUNCTIONS; SURFACE LEAKAGE CURRENT;

SEMICONDUCTOR DEVICES;

EID: 28044436193     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESIME.2005.1502871     Document Type: Conference Paper

References (10)

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9. Obreja V.V.N., Codreanu C., Avram M., Codreanu I., "Non-Uniform Junction Temperature Distribution in High Voltage Silicon Diodes Operating Above 150°C," Proc. Intern. Workshop on Thermal Investigations of ICs and Systems (THERMINIC2004), Sophia Antipolis, France, Sept. 2004, pp.79-84
10. th International Power Electronics and Motion Control Conference (EPEPEMC2004), Riga, Latvia, Sept.2004, vol.2, pp.102 -106